Magnetoresistive effect element, magnetic memory, and method of manufacturing magnetoresistive effect element

A method for manufacturing a magnetoresistive effect element, comprising:

• depositing stacked layers on a substrate, the stacked layers comprising a first magnetic material having a multi-layer structure depositing alternately a first film and a second film, a second magnetic material, and a nonmagnetic material deposited between the first magnetic layer and the second magnetic layer, the first film comprising an element selected from a first group including Tb, Dy, and Gd and an element selected from a second group including Co and Fe, and the second film comprising an element selected from the second group;
• and,
• processing the stacked layer to form a magnetoresistive effect element comprising a first magnetic layer having perpendicular magnetic anisotropy to a film surface, a second magnetic layer having magnetic anisotropy in the direction perpendicular to the film surface, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.