Semiconductor storage device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsKeiji HOSOTANI, Hiroyuki Kanaya
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Abstract
A semiconductor storage device according to the present embodiment includes a selection element formed on a surface of a semiconductor substrate. A lower electrode is connected to the selection element. A magnetic tunnel junction element is provided on the lower electrode. An upper electrode is provided on the magnetic tunnel junction element. A growth layer is provided on the upper electrode and is composed of a conductive material and has a larger area than the upper electrode when viewed from above the surface of the semiconductor substrate. A wiring line is provided on the growth layer.
Claims16
A semiconductor storage device comprising:
- a selection element on a surface of a semiconductor substrate;
- a lower electrode connected to the selection element;
- a magnetic tunnel junction element on the lower electrode;
- an upper electrode on the magnetic tunnel junction element;
- a growth layer on the upper electrode, the growth layer being formed by using a conductive material and having a larger area than the upper electrode when viewed from above the surface of the semiconductor substrate;
- and
- a wiring on the growth layer.
A method of manufacturing a semiconductor storage device, the method comprising:
- forming a selection element on a semiconductor substrate;
- forming a contact plug above the selection element, the contact plug being electrically connected to the selection element;
- depositing a material of a lower electrode on the contact plug;
- depositing a material of a magnetic tunnel junction element on the material of the lower electrode;
- depositing a material of an upper electrode on the material of the magnetic tunnel junction element;
- processing the material of the upper electrode, the material of the magnetic tunnel junction element, and the material of the lower electrode in order to form an upper electrode, a magnetic tunnel junction element, and a lower electrode;
- depositing an interlayer dielectric film so as to cover the upper electrode, the magnetic tunnel junction element, and the lower electrode;
- etching back the interlayer dielectric film until a top surface of the upper electrode is exposed;
- selectively growing a conductive material on the exposed top surface of the upper electrode in order to form a growth layer;
- and
- forming a wiring electrically connected to the growth layer.
Dependencies are inferred from the claim text.