Magnetic recording element and nonvolatile memory device

A nonvolatile memory device comprising:

• a magnetic recording element;
• a first interconnection connected to one end of the magnetic recording element;
• and
• a second interconnection connected to another end of the magnetic recording element,
• the magnetic recording element including:
• a stacked body including:
• a first stacked unit including:
• a first ferromagnetic layer, magnetization of the first ferromagnetic layer being substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface;
• a second ferromagnetic layer, a direction of magnetization of the second ferromagnetic layer being variable in directions perpendicular to a second ferromagnetic layer surface;
• and
• a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer;
• and
• a second stacked unit including:
• a third ferromagnetic layer, a direction of magnetization of the third ferromagnetic layer being variable in directions parallel to a third ferromagnetic layer surface;
• a fourth ferromagnetic layer, magnetization of the fourth ferromagnetic layer being substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface;
• and
• a second nonmagnetic layer provided between the third ferromagnetic layer and the fourth ferromagnetic layer,
• the first direction being opposite to the second direction and
• an electron spin-polarized by passing a current in a direction substantially perpendicular to a film surface of each layer of the stacked body being caused to act on the second ferromagnetic layer and a magnetic field generated by causing magnetization of the third ferromagnetic layer to precess being caused to act on the second ferromagnetic layer to enable a direction of magnetization of the second ferromagnetic layer to be determined to a direction in accordance with a direction of the current.