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US 2012/0068274 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorMasanori Kato
Life of this patent
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Abstract
According to one embodiment, a semiconductor device has a substrate comprising an element isolation area, a plurality of tetragonal active areas on the substrate separated by the element isolation area from each other, each of the active areas having an impurity diffusion area, a large active area comprising at least a part of the active areas, an outline of the large active area including a bump. Among the impurity diffusion areas of the active areas, impurity diffusion areas facing through the element isolation area are electrically connected.
Claims14
A semiconductor device comprising:
- a substrate comprising an element isolation area;
- a plurality of tetragonal active areas on the substrate separated by the element isolation area from each other, each of the active areas having an impurity diffusion area;
- and
- a large active area comprising at least a part of the active areas, an outline of the large active area including a bump,
- wherein among the impurity diffusion areas of the active areas, impurity diffusion areas facing through the element isolation area are electrically connected.
2 more elements
Dependencies are inferred from the claim text.