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US 2012/0068272 A1Published application
Conductive layers for hafnium silicon oxynitride
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Electronic apparatus and methods of forming the electronic apparatus include HfSiON for use in a variety of electronic systems. In various embodiments, conductive material is coupled to a dielectric containing HfSiON, where such conductive material may include one or more monolayers of titanium nitride, tantalum, or combinations of titanium nitride and tantalum.
Claims20
A method comprising:
- forming a dielectric including hafnium silicon oxynitride;
- forming the hafnium silicon oxynitride doped with elements or compounds other than hafnium or silicon;
- and
- forming a conductive material coupled to the dielectric.
1 more element
A method comprising:
- forming a memory having a dielectric including hafnium silicon oxynitride;
- forming the hafnium silicon oxynitride doped with elements or compounds other than hafnium or silicon;
- and
- forming one or more of a titanium nitride or tantalum coupled to the dielectric.
1 more element
An electronic device comprising:
- a dielectric including hafnium silicon oxynitride, the hafnium silicon oxynitride doped with elements or compounds other than hafnium or silicon;
- and
- a conductive material coupled to the dielectric.
Dependencies are inferred from the claim text.