US 2012/0068271 A1 · MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Abstract

After forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, a Ni film is deposited with a thickness of 10 nm or more over the semiconductor film while heating the substrate to 450° C. or higher, thereby forming Ni silicide on the semiconductor film. Alternatively, after forming a semiconductor film over a substrate, and removing an oxide film on the semiconductor film, a Ni film is deposited over the semiconductor film while heating the substrate up to 450° C. or higher, thereby forming Ni silicide on the semiconductor film.

Claims94

Dependent claims

A manufacturing method of a semiconductor device, comprising:

forming a gate electrode over a semiconductor substrate with a first insulating film interposed therebetween;
forming a film in contact with a surface of the gate electrode and surfaces of source and drain regions of the semiconductor substrate, thereby forming a metal silicide in upper portions of the source and drain regions of the semiconductor substrate;
removing an unreacted portion of the film;
and
forming a layer over the one of the source and drain regions of the semiconductor substrate,
wherein:
the film comprises nickel and platinum;
and
the layer comprises tungsten.

6 more elements

Dependencies are inferred from the claim text.

Manufacturing method of semiconductor device

Life of this patent

Manufacturing method of semiconductor device

Life of this patent

Abstract

Claims94