Producing a perfect P-N junction
OwnerWen Lininventor
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Abstract
This patent disclosure presents circuits, system, and method to produce an ideal memory cell and a method to produce a perfect PN junction without undesirable junction voltage and leakage current. These new inventions finally perfect the art to produce PN junction diode sixty years after PN junction diode was invented and the technology to produce an indestructible nonvolatile memory cell that is fast and small.
Claims5
A method to produce a PN junction by employing a correction electric field to align the direction of the electric field of polarized dipoles.
A nonvolatile memory cell consists of a memory cell transistor, a data switch transistor and a power supply switching diode.
Dependencies are inferred from the claim text.