US 2012/0068268 A1 · TRANSISTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

Abstract

A method of fabricating a transistor structure includes the step of providing a substrate having a gate thereon. Then, a first spacer is formed at two sides of the gate. After that, an LDD region is formed in the substrate at two sides of the gate. Later, a second spacer comprising a carbon-containing spacer and a sacrificing spacer is formed on the first spacer. Subsequently, a source/drain region is formed in the substrate at two sides of the gate. Finally, the sacrificing spacer is removed entirely, and part of the carbon-containing spacer is also removed. The remaining carbon-containing spacer has an L shape. The carbon-containing spacer has a first carbon concentration, and the sacrificing spacer has a second carbon concentration. The first carbon concentration is greater than the second carbon concentration.

Claims24

Dependent claims

A method of fabricating a transistor, comprising:

providing a substrate with a gate thereon;
forming a carbon-containing spacer at least at two side of the gate;
forming a sacrificing spacer on the carbon-containing spacer;
forming a source/drain region in the substrate on two side of the gate;
removing the sacrificing spacer, and part of the carbon-containing spacer;
and
forming a salicide layer one the source/drain region, wherein the salicide layer is closer to gate than the source/drain region is.

4 more elements

Dependencies are inferred from the claim text.

Transistor structure and method of fabricating the same

Life of this patent

Transistor structure and method of fabricating the same

Life of this patent

Abstract

Claims24