Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a semiconductor film over a substrate, wherein the semiconductor film includes a pair of P-type impurity regions and a pair of N-type impurity regions;
• a first gate electrode and a second gate electrode over the semiconductor film with a gate insulating film interposed therebetween;
• an interlayer insulator over the first gate electrode and the second gate electrode;
• and
• an electrode over the interlayer insulator,
• wherein the electrode is in direct contact with one of the pair of P-type impurity regions and one of the pair of N-type impurity regions, and
• wherein the one of the pair of P-type impurity regions is in direct contact with the one of the pair of N-type impurity regions.

A semiconductor device comprising:

• a semiconductor film over a substrate, wherein the semiconductor film includes a pair of P-type impurity regions and a pair of N-type impurity regions;
• a first gate electrode and a second gate electrode over the semiconductor film with a gate insulating film interposed therebetween;
• an interlayer insulator over the first gate electrode and the second gate electrode;
• and
• a first electrode, a second electrode, and a third electrode over the interlayer insulator,
• wherein the first electrode is in direct contact with one of the pair of P-type impurity regions and one of the pair of N-type impurity regions,
• wherein the second electrode is in direct contact with the other one of the pair of P-type impurity regions, and the third electrode is in direct contact with the other one of the pair of N-type impurity regions, and
• wherein the one of the pair of P-type impurity regions is in direct contact with the one of the pair of N-type impurity regions.