Wiring layer structure and process for manufacture thereof
AssigneesUlvac, Inc., Mitsubishi Materials Corporation
InventorsKazunari Maki, Kenichi Yaguchi, Yosuke Nakasato
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Abstract
This wiring layer structure includes: an underlying substrate of a semiconductor substrate or a glass substrate; an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate; an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer; and a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.
Claims20
A wiring layer structure comprising:
- an underlying substrate of a semiconductor substrate or a glass substrate;
- an oxygen-containing Cu layer or an oxygen-containing Cu alloy layer which is formed on the underlying substrate;
- an oxide layer containing at least one of Al, Zr, and Ti which is formed on the oxygen-containing Cu layer or the oxygen-containing Cu alloy layer;
- and
- a Cu alloy layer containing at least one of Al, Zr, and Ti which is formed on the oxide layer.
A method for manufacturing a wiring layer structure, comprising:
- in series,
- a step (a) of performing sputtering in a O2 atmosphere using a target containing at least Cu on an underlying substrate of a semiconductor substrate or a glass substrate;
- a step (b) of performing sputtering in an inert gas atmosphere using a Cu alloy containing at least one of Al, Zr, and Ti as a target;
- a step (c) of forming a wiring layer pattern in layers formed by the step (a) and the step (b) through etching, and exposing a portion of the underlying substrate;
- and
- a step (d) of performing a hydrogen plasma treatment to terminate dangling bonds which exist in an exposed surface of the underlying substrate,
- wherein the method further comprises a step (e) of performing annealing in a hydrogen atmosphere after the step (b) and before the step (d).
Dependencies are inferred from the claim text.