Power Switching Semiconductor Devices Including Rectifying Junction-Shunts

A diode, comprising:

• a drift layer having a first conductivity type;
• a body region in the drift layer, the body region having a second conductivity type opposite the first conductivity type and forming a p-n junction with the drift layer;
• a contactor region in the body region, the contactor region having the first conductivity type;
• a static induction rectifier (SIR) channel region extending from the contactor region to the drift layer, wherein the SIR channel region is configured to be fully depleted at zero drain-source voltage and to form a conductive channel between the contactor region and the drift layer at an applied voltage that is less than a built-in potential of the p-n junction between the body region and the drift layer.

A semiconductor device, comprising:

• a semiconductor layer;
• a body region forming a p-n junction with the semiconductor layer;
• a contactor region on the body region opposite the semiconductor layer;
• and
• a shunt channel region that extends from the contactor region through the body region to the semiconductor layer, and that forms a conductive channel between the contactor region and the semiconductor layer in response to a voltage that is less than a built-in potential of the p-n junction being applied between the contactor region and the semiconductor layer.