Method for producing a structure element and semiconductor component comprising a structure element

A semiconductor component, comprising:

• a semiconductor body having a surface;
• a cutout in the semiconductor body, the cutout extending from the surface of the semiconductor body into the semiconductor body in a direction perpendicular to the surface, and the cutout having a base and at least one sidewall;
• a layer on the surface of the semiconductor body and in the cutout, the layer forming a well above the cutout, the well having a well base, a well edge and at least one well sidewall, the at least one well sidewall forming an angle α in the range of 20° to 80° with respect to the surface of the semiconductor body;
• and
• wherein the layer has at least one edge which, proceeding from the well edge, extends in the direction of the surface of the semiconductor body.

A semiconductor device, comprising:

• a semiconductor body having a surface;
• a cutout in the semiconductor body, the cutout extending from the surface of the semiconductor body into the semiconductor body in a direction perpendicular to the surface, and the cutout having a base and at least one sidewall;
• a field effect transistor gate structure in the cutout;
• a layer on the gate structure, the layer forming a well above the cutout and the gate structure, the well having a well base and at least one well sidewall, the at least one well sidewall forming an angle α in the range of 20° to 80° with respect to the surface of the semiconductor body.