Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsTsunehiro Ino, Masao Shingu, Shosuke Fujii, Akira Takashima, Daisuke Matsushita, Jun Fujiki, Naoki Yasuda, Yasushi Nakasaki, Koichi Muraoka
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Abstract
According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.
Claims15
A semiconductor device comprising:
- a semiconductor region;
- a tunnel insulating film provided on the semiconductor region;
- a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region;
- a block insulating film provided on the charge storage insulating film;
- and
- a control gate electrode provided on the block insulating film.
A method for manufacturing a semiconductor device comprising:
- a semiconductor region;
- a tunnel insulating film provided on the semiconductor region;
- a charge storage insulating film provided on the tunnel insulating film;
- a block insulating film provided on the charge storage insulating film;
- and
- a control gate electrode provided on the block insulating film,
- wherein forming the charge storage insulating film comprises forming a hafnium oxide including a cubic region.
Dependencies are inferred from the claim text.