Three-dimensional semiconductor memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsCHANGHYUN LEE, Byoungkeun Son, Youngwoo Park
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Abstract
Provided are three-dimensional semiconductor devices. The devices may include gap-fill insulating patterns configured to upwardly extend from a substrate and an electrode structure defined by sidewalls of the gap-fill insulating patterns. Vertical structures may be provided between adjacent ones of the gap-fill insulating patterns to penetrate the electrode structure, and the vertical structures may include first and second rows of the vertical structures. A separation pattern may be provided between the first and second rows of vertical structures and include a separation semiconductor layer. The separation pattern extends along a direction parallel to the first and second rows of vertical structures.
Claims20
A three-dimensional semiconductor device, comprising:
- a substrate;
- gap-fill insulating patterns on the substrate;
- an electrode structure defined by sidewalls of the gap-fill insulating patterns;
- vertical structures provided between adjacent gap-fill insulating patterns of the gap-fill insulating patterns to penetrate the electrode structure, the vertical structures including first and second rows of the vertical structures;
- and
- a separation pattern provided between the first and second rows of vertical structures, the separation pattern comprising a separation semiconductor layer,
- wherein the separation pattern extends along a direction parallel to the first and second rows of vertical structures.
A three-dimensional semiconductor device, comprising:
- electrodes sequentially stacked on a substrate;
- vertical structures penetrating the electrodes, the vertical structures two-dimensionally arranged on the substrate;
- separation patterns extending along a first direction parallel to a top surface of the substrate, wherein each of the separation patterns comprises a separation semiconductor layer;
- and
- gap-fill insulating patterns extending parallel to the separation patterns, wherein the separation patterns and the gap-fill insulating patterns are alternately disposed between the vertical structures disposed along a second direction crossing the first direction.
A semiconductor device comprising:
- a substrate;
- a plurality of horizontal structures sequentially stacked on a top surface of the substrate;
- a row of vertical structures penetrating the horizontal structures in a first direction perpendicular to the top surface of the substrate, wherein the vertical structures are spaced apart from each other in a second direction parallel to the top surface of the substrate;
- a separation pattern penetrating at least one of the horizontal structures in the first direction, wherein the separation pattern extends in the second direction;
- and
- a gap-fill insulating pattern penetrating the horizontal structures in the first direction, wherein the gap-fill insulating pattern extends in the second direction, and wherein the row of vertical structures, the separation pattern, and the gap-fill insulating pattern are arranged in parallel to each other in a third direction parallel to the top surface of the substrate and perpendicular to the second direction.
Dependencies are inferred from the claim text.