Semiconductor Device and Method using a Sacrificial Layer
AssigneeInfineon Technologies AG
InventorsReinhard Goellner, Rudolf Berger
Life of this patent
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Abstract
A method of manufacturing a semiconductor device is disclosed. The method includes forming a first conductive layer over a substrate. The first conductive layer has a top surface and sidewalls, wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls. The method further includes forming an insulating layer on the first conductive layer, and forming a sacrificial layer over the insulating layer and the overhang of the first conductive layer. The sacrificial layer is partially removed wherein a residue of the sacrificial layer remains beneath the overhang, and a second conductive layer is formed on the insulating layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first conductive layer over a substrate, the first conductive layer having a top surface and sidewalls, wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls;
- forming an insulating layer on the first conductive layer;
- forming a sacrificial layer over the insulating layer and the overhang of the first conductive layer;
- partially removing the sacrificial layer, wherein a residue of the sacrificial layer remains beneath the overhang;
- and
- forming a second conductive layer on the insulating layer.
A method of manufacturing an EEPROM, the method comprising:
- forming a tunnel oxide over a substrate;
- forming a floating gate over the tunnel oxide, the floating gate having sidewall and a top surface, wherein a non-conductive overhang is formed along at least one of the sidewalls of the floating gate;
- forming a dielectric on the floating gate;
- forming a sacrificial layer over the dielectric and the non-conductive overhang;
- partially removing the sacrificial layer, wherein a residue of the sacrificial layer remains in an opening beneath the non-conductive overhang;
- forming a control gate on the dielectric;
- and
- forming source/drain regions in the substrate next to the tunnel oxide.
A semiconductor device comprising:
- a first dielectric layer;
- a first conductive layer on the first dielectric layer, wherein the first conductive layer comprises sidewalls, and wherein the first conductive layer comprises an overhang of a non-conductive material along the sidewalls;
- a second dielectric layer on the first conductive layer;
- and
- a second conductive layer on the second dielectric layer,
- wherein a carbon residue is disposed beneath the overhang.
Dependencies are inferred from the claim text.