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US 2012/0068231 A1Published application
Vertical discrete devices with trench contacts and associated methods of manufacturing
AssigneeMonolithic Power Systems, Inc.
InventorMartin E. Garnett
Life of this patent
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Abstract
The present technology is related generally to vertical discrete devices with a trench at the topside of the vertical discrete devices. The trench is filled with a conducting material. In this approach, a drain or cathode of the vertical discrete devices is electrically connected to the topside to result in a small area with low RON*AREA.
Claims20
A semiconductor device, comprising:
- a vertical device with a substrate at a backside and a topside opposite the backside, and
- a trench extending from the topside to the backside substrate, the trench being filled with a conducting material.
A process for forming a semiconductor device, comprising:
- forming a vertical device with a substrate at a backside and a topside opposite the backside;
- forming a trench extending from the topside toward the backside, the trench extending into the substrate;
- and
- filling the trench with a conducting material.
1 more element
Dependencies are inferred from the claim text.