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US 2012/0068230 A1Published application
Image sensor capable of increasing photosensitivity and method for fabricating the same
AssigneeCrosstek Capital, LLC
InventorsMyoung-Shik Kim, Hyung-Jun Kim
Life of this patent
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Abstract
An image sensor capable of overcoming a decrease in photo sensitivity resulted from using a single crystal silicon substrate, and a method for fabricating the same are provided. An image sensor includes a single crystal silicon substrate, an amorphous silicon layer formed inside the substrate, a photodiode formed in the amorphous silicon layer, and a transfer gate formed over the substrate adjacent to the photodiode and transferring photoelectrons received from the photodiode.
Claims20
An image sensor comprising:
- an opening disposed in an epitaxial layer;
- an amorphous silicon layer disposed in the opening;
- a photodiode disposed within the amorphous silicon layer;
- and
- a transfer gate disposed above a portion of the epitaxial layer and adjacent to the photodiode.
2 more elements
An image sensor comprising:
- an opening disposed in an epitaxial layer;
- an amorphous silicon layer disposed in the opening and including a width;
- a photodiode disposed within the amorphous silicon layer and including:
- a P-type impurity region disposed across the width of the amorphous silicon layer;
- and
- an N-type impurity region disposed below the P-type impurity region;
- and
- a transfer gate disposed above a portion of the epitaxial layer and adjacent to the photodiode.
5 more elements
An image sensor comprising:
- an opening disposed in an epitaxial layer;
- an amorphous silicon layer disposed in the opening and including a width;
- a photodiode disposed within the amorphous silicon layer and including:
- a P-type impurity region disposed across only a portion of the width of the amorphous silicon layer;
- and
- an N-type impurity region disposed below the P-type impurity region;
- and
- a transfer gate disposed above a portion of the epitaxial layer and adjacent to the photodiode.
5 more elements
Dependencies are inferred from the claim text.