Semiconductor device
AssigneePanasonic Corporation
InventorsMasahiro HIKITA, Manabu YANAGIHARA
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Abstract
A normally off semiconductor device with a reduced off-state leakage current, which is applicable to a power switching element, includes: a substrate; an undoped GaN layer formed above the substrate; an undoped AlGaN layer formed on the undoped GaN layer; a source electrode and a drain electrode, formed on the undoped GaN layer or the undoped AlGaN layer; a P-type GaN layer formed on the undoped AlGaN layer and disposed between the source electrode and the drain electrode; and a gate electrode formed on the P-type GaN layer, wherein the undoped GaN layer includes an active region including a channel and an inactive region not including the channel, and the P-type GaN layer is disposed to surround the source electrode.
Claims16
A semiconductor device comprising:
- a substrate;
- a first nitride semiconductor layer formed above said substrate;
- a second nitride semiconductor layer formed on said first nitride semiconductor layer and having a higher bandgap energy than said first nitride semiconductor layer;
- a source electrode and a drain electrode which are formed on one of said first nitride semiconductor layer and said second nitride semiconductor layer;
- a third nitride semiconductor layer of P-type conductivity formed on said second nitride semiconductor layer and disposed between said source electrode and said drain electrode;
- and
- a gate electrode formed on said third nitride semiconductor layer,
- wherein said first nitride semiconductor layer includes an active region and an inactive region, the active region including a channel, and the inactive region not including the channel, and
- said third nitride semiconductor layer is disposed to surround at least one of said source electrode and said drain electrode.
Dependencies are inferred from the claim text.