Bidirectional protection component
AssigneeSTMicroelectronics (Tours) SAS
InventorBenjamin Morillon
Life of this patent
Estimating the term…
Abstract
A bidirectional protection component formed in a semiconductor substrate of a first conductivity type including a first implanted area of the first conductivity type, an epitaxial layer of the second conductivity type on the substrate and the first implanted area, a second area of the first conductivity type on the external side of the epitaxial layer, in front of the first area, and implanted with the same dose as the first area, a first metallization covering the entire lower surface of the substrate, and a second metallization covering the second area.
Claims11
-5. (canceled)
A method of manufacturing a bidirectional protection component formed in a semiconductor substrate of a first conductivity type, comprising:
- implanting a first area of the first conductivity type,
- epitaxing a layer of the second conductivity type on the substrate and the first area,
- implanting a second area of the first conductivity type on the external surface of the epitaxial layer, in front of the first area, with the same dose as the first area,
- covering the entire lower surface of the substrate with a first metallization, and
- covering the second area with a second metallization.
A bidirectional protection component formed in a semiconductor substrate of a first conductivity type, comprising:
- a first implanted area of the first conductivity type,
- an epitaxial layer of the second conductivity type on the substrate and the first implanted area,
- a second area of the first conductivity type on the external surface of the epitaxial layer, in front of the first area, and implanted with the same dose as the first area,
- a first metallization covering the entire lower surface of the substrate, and
- a second metallization covering the second area.
The bidirectional protection component of claim 1, wherein, outside of the first and second areas, an insulated trench crosses the epitaxial layer.
The bidirectional protection component of claim 2, wherein the trench is formed through a heavily-doped ring of the second conductivity type, used as a channel stop.
The bidirectional protection component of claim 1, wherein the epitaxial layer has a doping level ranging between 1015 and 6.1017 atoms/cm3.
The bidirectional protection component of claim 1, wherein the epitaxial layer is submitted to an operation of decrease of the lifetime of minority carriers, for example, by electron or neutron irradiation or implantation of heavy ions such as platinum or gold.
Dependencies are inferred from the claim text.