Light emitting device
AssigneeLG Innotek Co., Ltd.
InventorsSangYoul LEE, JuneO SONG, KwangKi CHOI, HwanHee JEONG, HyeYoung KIM
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Abstract
A light emitting device is provided. According to an embodiment, the light emitting device includes a first layer to diffuse first light emitted from the active layer, and a second layer to convert the diffused first light into second light having a different wavelength than the first light. Accordingly, it may be possible to diffuse first light emitted from the light emitting structure and to wavelength-convert the first light into second light because the conversion layer including the first and second layers is disposed on the light emitting structure.
Claims20
1. A light emitting device, comprising:
- a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, an active layer interposed between the first and second semiconductor layers;
- a first electrode electrically connected to the first semiconductor layer;
- a second electrode electrically connected to the second semiconductor layer, and formed through the first semiconductor layer and the active layer;
- an insulating layer disposed between the second electrode and the first electrode, between the second electrode and the first semiconductor layer;
- and,
- a conversion layer disposed on the second semiconductor layer, the conversion layer comprising a first layer to diffuse first light emitted from the active layer, and a second layer to absorb the first light diffused by the first layer and to convert the first light into second light having a different wavelength than the first light.
A light emitting device, comprising:
- a substrate comprising first and second substrate portions spaced apart from each other;
- a light emitting structure dispose on the substrate, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, an active layer interposed between the first and second semiconductor layers;
- a first electrode interposed between the first substrate and the first semiconductor layer, and electrically connected to the first semiconductor layer;
- a second electrode disposed on the second substrate, formed through the first semiconductor layer and the active layer, and electrically connected to the second semiconductor layer;
- an insulating layer disposed between the second electrode and the first electrode, between the second electrode and the first semiconductor layer;
- and,
- a conversion layer disposed on the second semiconductor layer, the conversion layer comprising a first layer to diffuse first light emitted from the active layer, and a second layer to absorb the first light diffused by the first layer and to convert the first light into second light having a different wavelength than the first light.
A light emitting device, comprising:
- a substrate;
- a light emitting structure dispose on the substrate, the light emitting structure comprising a first semiconductor layer, a second semiconductor layer, an active layer interposed between the first and second semiconductor layers;
- a first electrode electrically connected to the first semiconductor layer;
- a second electrode electrically connected to the second semiconductor layer, and formed through the first semiconductor layer and the active layer;
- an insulating layer disposed between the second electrode and the first electrode, between the second electrode and the first semiconductor layer;
- and,
- a conversion layer disposed on the second semiconductor layer, to perform diffusion and wavelength conversion for first light emitted from the active layer,
- wherein the conversion layer comprises:
- a first layer to diffuse the first light, the first layer being formed with at least one opening at one or more surfaces of the first layer;
- and
- a second layer disposed in the at least one opening, to absorb the first light and to convert the absorbed first light into second light having a different wavelength than the first light.
Dependencies are inferred from the claim text.