Light emitting component and manufacturing method thereof
AssigneeIntematix Technology Center Corp.
InventorHis-yan CHOU
Life of this patent
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Abstract
A light emitting component, and more particularly to a white light emitting component with high light emitting efficiency are provided. The white light emitting component with high light emitting efficiency has properties of high driving voltage, high color render index and concentrated optical density. The light emitting component includes a plurality of different light emitting diode chip groups for emitting a number of lights in different wavelength ranges and a wavelength conversion fluorescent material. A manufacturing method by stacking miniature light emitting diode chip groups to form the white light emitting component is also provided.
Claims20
A light emitting component, comprising:
- a leadframe;
- a first insulating substrate disposed on the leadframe, the first insulating substrate comprising a first region and a second region;
- a first light emitting diode chip group disposed on the first insulating substrate and located in the first region, the first light emitting diode chip group being configured for emitting a first light;
- a second light emitting diode chip group disposed on the first insulating substrate and located in the second region, the second light emitting diode chip group being configured for emitting a second light;
- and
- a wavelength conversion fluorescent material disposed on the first light emitting diode chip group and the second light emitting diode chip group, the wavelength conversion fluorescent material being configured for absorbing a part of the first light emitting from the first light emitting diode chip group to emit a third light, wherein a wavelength range of the first light, a wavelength range of the second light and a wavelength range of the third light are different.
A method for manufacturing a light emitting component, comprising:
- disposing a first insulating substrate on a leadframe, the first insulating substrate comprising a first region and a second region;
- forming a first light emitting diode chip group on the first substrate and in the first region, the first emitting diode chip group being configured for emitting a first light;
- forming a second light emitting diode chip group on the first substrate and in the second region, the second emitting diode chip group being configured for emitting a second light;
- and
- disposing a wavelength conversion fluorescent material on the first light emitting diode chip group and the second light emitting diode chip group, the wavelength conversion fluorescent material being configured for absorbing a part of the first light emitting from the first light emitting diode chip group to emit a third light, wherein a wavelength range of the first light, a wavelength range of the second light and a wavelength range of the third light are different.
Dependencies are inferred from the claim text.