Optical device, semiconductor wafer, method of producing optical device, and method of producing semiconductor wafer

A semiconductor wafer comprising:

• a base wafer containing silicon;
• a plurality of seed crystals disposed directly or indirectly on the base wafer;
• and
• a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals, wherein
• at least one of the Group 3-5 compound semiconductors is a semiconductor that has a photoelectric semiconductor that includes therein a semiconductor that can serve as a light emitting semiconductor that outputs light in response to a driving current to be supplied thereto or a semiconductor that can serve as a light receiving semiconductor that generates a photocurrent in response to light to be applied thereto, and
• at least one of the plurality of Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor having the photoelectric semiconductor is a semiconductor in which a heterojunction transistor can be formed.

A method of producing an optical device, comprising:

• forming a plurality of seed crystals on a base wafer containing silicon;
• forming a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals by crystal growth;
• forming, in at least one of the plurality of Group 3-5 compound semiconductors, a photoelectric semiconductor including a light emitting semiconductor that outputs light in response to a driving current supplied thereto or a light receiving semiconductor that generates a photocurrent in response to light applied thereto;
• forming a heterojunction transistor in at least one of Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor having the photoelectric semiconductor;
• and
• connecting the photoelectric semiconductor and the heterojunction transistor to each other.

A method of producing a semiconductor wafer, comprising:

• forming a plurality of seed crystals directly or indirectly on a base wafer containing silicon;
• annealing the seed crystals;
• and
• forming a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the seed crystals by crystal growth, wherein
• in the forming the Group 3-5 compound semiconductors by crystal growth
• a plurality of first first-conductivity-type semiconductors are respectively formed by crystal growth on the plurality of seed crystals annealed, the first first-conductivity-type semiconductors containing an impurity that exhibits a first conductivity type that is one of P type and N type;
• a plurality of second-conductivity-type semiconductors are respectively formed by crystal growth on the first first-conductivity-type semiconductors, the second-conductivity-type semiconductors containing an impurity that exhibits a conductivity type opposite to the first conductivity type;
• and
• a plurality of second first-conductivity-type semiconductors are respectively formed by crystal growth on the second-conductivity-type semiconductors, the second first-conductivity-type semiconductors containing an impurity that exhibits the first conductivity type.