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US 2012/0068195 A1Published application
Method for manufacturing silicon carbide substrate and silicon carbide substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsShin Harada, Makoto Sasaki, Taro Nishiguchi, Hideto Tamaso, Yasuo Namikawa
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Abstract
A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar view; and forming a filling portion filling a gap between the plurality of SiC substrates.
Claims21
A method for manufacturing a silicon carbide substrate, comprising the steps of:
- preparing a plurality of SiC substrates each made of single-crystal silicon carbide;
- forming a base layer made of silicon carbide and holding said plurality of SiC substrates, which are arranged side by side when viewed in a planar view;
- and
- forming a filling portion filling a gap between said plurality of SiC substrates.
1 more element
A silicon carbide substrate, comprising:
- a plurality of SiC layers each made of single-crystal silicon carbide and arranged side by side when viewed in a planar view;
- and
- a filling portion filling a gap between said plurality of SiC layers.
Dependencies are inferred from the claim text.