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US 2012/0068194 A1Published application
Silicon carbide semiconductor devices
OwnerAdrian Shipley, Philip Mawby +2inventors
InventorsAdrian Shipley, Philip Mawby, Michael Jennings, James Covington
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Abstract
A method of manufacturing a semiconductor device, wherein the method comprises applying a first layer comprising silicon to a second layer comprising silicon carbide, wherein an interface is defined between the first and second layers; and oxidising sonic or all of the first layer.
Claims9
A method of manufacturing a semiconductor device, wherein the method comprises;
- applying a first layer comprising silicon to a second layer comprising silicon carbide, wherein an interface is defined between the first and second layers;
- and
- oxidising some or all of the first layer.
Dependencies are inferred from the claim text.