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AssigneeThe Regents of the University of California
InventorsHugues Marchand, Brendan J. Moran, Umesh K. Mishra, James S. Speck
Estimating the term…
Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.
An optoelectronic or electronic device grown on a group III-nitride layer, wherein the group III-nitride layer is deposited on or above a silicon substrate and has a compressive stress.
A method of fabricating a device, comprising:
Dependencies are inferred from the claim text.