Method for Vertical and Lateral Control of III-N Polarity

A method comprising:

• providing an N-polar bulk III-N substrate;
• depositing an AlN inversion layer on the substrate;
• and
• depositing a III-N epitaxial layer on the AlN inversion layer to produce III-polar material on the AlN inversion layer.

A method comprising:

• providing a III-polar bulk III-N substrate or a sapphire substrate having an epitaxial layer of III-polar III-N material;
• depositing an inversion layer on the substrate;
• and
• depositing a III-N epitaxial layer on the inversion layer to produce N-polar material on the inversion layer.

A composition comprising:

• a bulk III-N substrate;
• an inversion layer on portions of an N-polar or III-polar surface of the substrate;
• and
• a III-N epitaxial layer on the inversion layer;
• wherein the III-N epitaxial layer is of the opposite polarity of the surface of the substrate.

A method comprising:

• providing a substrate having an surface layer of an N-polar or III-polar III-N material;
• depositing an inversion layer on the surface layer in a pattern leaving exposed regions of the surface layer;
• depositing a first III-N epitaxial layer on a portion of the inversion layer;
• wherein the first III-N epitaxial layer is of the opposite polarity of the surface layer;
• and
• depositing a second III-N epitaxial layer on a portion of the exposed regions;
• wherein the second III-N epitaxial layer is of the same polarity as the surface layer;
• and
• wherein the first III-N epitaxial layer, the second III-N epitaxial layer, or both comprise a region surrounded by an edge that is not in contact with the other of the first III-N epitaxial layer or the second III-N epitaxial layer.