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AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorsBoris N. Feigelson, Travis Anderson, Francis J. Kub
Estimating the term…
A GaN sample in a sealed enclosure is heated very fast to a high temperature above the point where GaN is thermodynamically stable and is then cooled down very fast to a temperature where it is thermodynamically stable. The time of the GaN exposure to a high temperature range above its thermodynamic stability is sufficiently short, in a range of few seconds, to prevent the GaN from decomposing. This heating and cooling cycle is repeated multiple times without removing the sample from the enclosure. As a result, by accumulating the exposure time in each cycle, the GaN sample can be exposed to a high temperature above its point of thermodynamic stability for a long time but the GaN sample integrity is maintained (i.e., the GaN doesn't decompose) due to the extremely short heating duration of each single cycle.
A process for annealing a III-nitride semiconductor, the process including:
A process for annealing a III-nitride semiconductor, the process including:
A semiconductor device having at least one area having highly activated p-type conductivity, comprising a doped III-nitride semiconductor annealed by a plurality of repeated rapid heating and cooling cycles at a temperature above the point of thermodynamic stability of the III-nitride semiconductor.
Dependencies are inferred from the claim text.