Integrated circuit device and method for manufacturing integrated circuit device

A device comprising:

• a first conductive film over a substrate;
• a second conductive film over and electrically connected to the first conductive film;
• a transistor including a gate insulating film, an interlayer insulating film, a source electrode and a drain electrode over the substrate;
• and
• an electrode connected to one of the source electrode and the drain electrode and electrically connected to the first conductive film through the second conductive film over the transistor,
• wherein at least a part of the second conductive film is provided in a contact hole formed in the gate insulating film and the interlayer insulating film, and
• wherein the second conductive film comprises copper.

A device comprising:

• a first conductive film over a substrate;
• a second conductive film over and electrically connected to the first conductive film;
• an insulating film over a part of the second conductive film;
• a transistor including a gate insulating film, an interlayer insulating film, a source electrode and a drain electrode over the substrate;
• and
• an electrode connected to one of the source electrode and the drain electrode and electrically connected to the second conductive film over the transistor,
• wherein at least a part of the second conductive film is provided in a contact hole formed in the gate insulating film, the interlayer insulating film, and the insulating film, and
• wherein the second conductive film comprises copper.

A device comprising:

• a first conductive film over a substrate;
• a second conductive film over and electrically connected to the first conductive film;
• an insulating film over a part of the second conductive film;
• a transistor including a gate insulating film, an interlayer insulating film, a source electrode and a drain electrode over the substrate;
• and
• an electrode connected to one of the source electrode and the drain electrode and electrically connected to the first conductive film through the second conductive film over the transistor,
• wherein at least a part of the second conductive film is provided in a contact hole formed in the gate insulating film, the interlayer insulating film, and the insulating film, and
• wherein the second conductive film comprises copper.