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US 2012/0068180 A1Published application
Methods of forming low interface resistance contacts and structures formed thereby
OwnerRishabh Mehandru, Bernhard Sell +2inventors
InventorsRishabh Mehandru, Bernhard Sell, Anand Murthy, Lucian Shifren
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Abstract
Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a tapered contact opening in an ILD disposed on a substrate, wherein a source/drain contact area is exposed, preamorphizing a portion of a source drain region of the substrate, implanting boron into the source/drain region through the tapered contact opening, forming a metal layer on the source/drain contact area, and then annealing the metal layer to form a metal silicide.
Claims16
A structure comprising:
- a tapered contact metal disposed on a silicide disposed within a source/drain region of a substrate;
- and
- a silicide/amorphous silicon interface disposed within the source/drain region, wherein a boron species comprises a higher concentration at the silicide/amorphous silicon interface of the source/drain region than in a non-interface portion of the source/drain region.
A structure comprising:
- a gate disposed on a substrate;
- a spacer material disposed adjacent the gate;
- a tapered contact metal disposed on a silicide disposed in a source/drain region that is disposed in the substrate, wherein the tapered contact metal is disposed adjacent the gate;
- and
- a silicide/amorphous silicon interface of the source/drain region, wherein a boron species comprises a higher concentration at the interface than in a non-interface portion of the source drain region.
2 more elements
Dependencies are inferred from the claim text.