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US 2012/0068172 A1Published application
Organic light emitting display device and method for manufacturing the same
AssigneeE Ink Holdings Inc.
InventorsSUNG-HUI HUANG, Wei-Chou Lan, Chia-Chun Yeh, Ted-Hong Shinn
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Abstract
An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition, the present invention also provides a method for manufacturing the organic light-emitting display device.
Claims11
An organic light emitting display device, comprising:
- a substrate having a first thin film transistor region, a second thin film transistor region and an organic light emitting region, the second thin film transistor region located between the first thin film transistor region and the organic light emitting region;
- a transparent electrode layer disposed on the substrate, and comprising a first electrode, a second electrode and a third electrode, the first electrode located above the first thin film transistor region, the second electrode located above the second thin film transistor region, the third electrode located above the organic light emitting region and electrically connected with the second electrode;
- a source/drain layer disposed on the transparent electrode layer, and comprising a first drain and a second drain, the first drain located above the first thin film transistor region, the second drain located above the second thin film transistor region;
- an IGZO semiconductor layer disposed on the source/drain layer and the substrate, and comprising a first semiconductor and a second semiconductor, the first semiconductor located above the first thin film transistor region, the second semiconductor located above the second thin film transistor region;
- a first insulating layer disposed on the source/drain layer, the IGZO semiconductor layer and the substrate, and exposing the third electrode;
- a gate layer disposed on the first insulating layer, and comprising a first gate and a second gate, the first gate located above the first thin film transistor region, the second gate located above the second thin film transistor region, extended to above the first thin film transistor region and electrically connected with the first drain;
- a second insulating layer disposed on the first insulating layer and the gate layer, and exposing the third electrode;
- and
- an organic light emitting diode disposed on the third electrode.
6 more elements
A method for manufacturing an organic light emitting display device, the method comprises:
- forming a substrate having a first thin film transistor region, a second thin film transistor region and an organic light emitting region, the second thin film transistor region located between the first thin film transistor region and the organic light emitting region;
- forming a transparent electrode layer on the substrate, the transparent electrode layer comprising a first electrode, a second electrode and a third electrode, the first electrode located above the first thin film transistor region, the second electrode located above the second thin film transistor region, the third electrode located above the organic light emitting region and electrically connected with the second electrode;
- forming a source/drain layer on the transparent electrode layer, the source/drain layer comprising a first drain and a second drain, the first drain located above the first thin film transistor region, the second drain located above the second thin film transistor region;
- forming an IGZO semiconductor layer on the source/drain layer and the substrate, the IGZO semiconductor layer comprising a first semiconductor and a second semiconductor, the first semiconductor located above the first thin film transistor region, the second semiconductor located above the second thin film transistor region;
- forming a first insulating layer on the source/drain layer, the IGZO semiconductor layer and the substrate;
- forming a gate layer on the first insulating layer, the gate layer comprising a first gate and a second gate, the first gate located above the first thin film transistor region, the second gate located above the second thin film transistor region, extended to above the first thin film transistor region and electrically connected with the first drain;
- forming a second insulating layer on the first insulating layer and the gate layer;
- defining an opening in the first insulating layer and the second insulating layer, the opening exposing the third electrode;
- and
- forming an organic light emitting diode on the third electrode.
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Dependencies are inferred from the claim text.