Permeation barrier for encapsulation of devices and substrates
AssigneeUniversal Display Corporation
InventorsPrashant Mandlik, Jeffrey Silvernail, Ruiqing Ma
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Abstract
A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF4—O2 Plasma Reactive Ion Etch Rate and a second region having a second composition corresponding to a second CF4—O2 Plasma Reactive Ion Etch Rate, wherein the second Etch Rate is greater than the first Etch Rate by a factor greater than 1.2 and the hybrid permeation barrier film is a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the mixture is created from a single precursor material.
Claims33
A permeation barrier film structure having a hybrid permeation barrier composition, the permeation barrier film structure comprising:
- one or more bilayers, wherein each of said bilayers comprising:
- a first region having a first composition corresponding to a first CF4—O2 Plasma Reactive Ion Etch Rate;
- and
- a second region having a second composition corresponding to a second CF4—O2 Plasma Reactive Ion Etch Rate, wherein the second CF4—O2 Plasma Reactive Ion Etch Rate is greater than the first CF4—O2 Plasma Reactive Ion Etch Rate by a factor greater than 1.2.
A permeation barrier film structure having a hybrid permeation barrier composition, the permeation barrier film structure comprising:
- one or more bilayers, wherein each of said bilayers comprising:
- a first region having a CF4—O2 Plasma Reactive Ion Etch Rate less than 65 nm/min;
- and
- a second region having a CF4—O2 Plasma Reactive Ion Etch Rate greater than 80 nm/min.
An organic electronic device provided on a substrate comprising:
- a permeation barrier film structure having a hybrid permeation barrier composition, the permeation barrier film structure coated over the organic electronic device, said permeation barrier film structure comprising:
- one or more bilayers, wherein each of said bilayers comprising:
- a first region having a first composition corresponding to a first CF4—O2 Plasma Reactive Ion Etch Rate;
- and
- a second region having a second composition corresponding to a second CF4—O2 Plasma Reactive Ion Etch Rate, wherein the second CF4—O2 Plasma Reactive Ion Etch Rate is greater than the first CF4—O2 Plasma Reactive Ion Etch Rate by a factor greater than 1.2.
Dependencies are inferred from the claim text.