Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductor

Abstract

A method for forming graphene includes introducing a substrate and a carbon-containing reactant source into a chamber, and radiating a laser beam onto the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source. A carbon-containing gas (methane) decomposes upon radiation of a laser beam. The carbon-containing gas has a decomposition rate on the order of femtoseconds and the laser beam has a pulse on the order of nanoseconds or more. The graphene is grown in a single layer along the surface of the substrate. Then, the graphene is selectively patterned using a laser beam to form a desired pattern.

Dependencies are inferred from the claim text.