# US 2012/0068160 A1 · Semiconductor device and method for fabricating the same

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- Number: US 2012/0068160 A1
- Document ID: US20120068160A1
- Status: Published application
- Kind: A1
- Application number: 13/075,591
- Filed: 2011-03-30
- Published: 2012-03-22
- Earliest claimed: 2010-09-16
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Yuichi YAMAZAKI; Makoto Wada; Tadashi Sakai
- Web page: https://patentgrep.com/patent/US20120068160A1

## CPC

- H10D 62/882: {Graphene}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 48/01: Manufacture or treatment
- H10D 48/36: Unipolar devices
- H10D 62/8303: {Diamond}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10P 14/3241: {being conductive materials}
- H10P 14/3406: {Carbon, e.g. diamond-like carbon}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.

## Claims

### Claim 1

A semiconductor device, comprising:
a catalytic metal film formed above a substrate;
a graphene film formed on the catalytic metal film;
a contact plug connected to the graphene film; and
an adjustment film formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.

### Claim 2 (depends on 1)

The device according to claim 1, wherein an energy band structure in the region connected to the adjustment film of the surface of the graphene film is symmetric with respect to an energy axis including a Dirac point and a straight line in a wave number direction.

### Claim 3 (depends on 1)

The device according to claim 1, wherein a difference between the Dirac point position in the region connected to the contact plug of the surface of the graphene film and the Dirac point position in the region connected to the adjustment film is ±0.5 eV or less.

### Claim 4 (depends on 1)

The device according to claim 1, wherein one of a metal, an organic compound, and an inorganic compound is used as a material of the adjustment film.

### Claim 5 (depends on 1)

The device according to claim 1, wherein at least one of silver (Ag), aluminum (Al), gold (Au), cobalt (Co), chrome (Cr), copper (Cu), iron (Fe), nickel (Ni), tantalum (Ta), titanium (Ti), tungsten (W), and vanadium (V) or an alloy containing at least one of the above metals is used as a material of the contact plug.

### Claim 6 (depends on 1)

The device according to claim 1, wherein at least one of cobalt (Co), nickel (Ni), iron (Fe), copper (Cu), ruthenium (Ru), and platinum (Pt) or an alloy containing at least one of the above metals is used as a material of the catalytic metal film.

### Claim 7 (depends on 1)

The device according to claim 1, wherein the graphene film is formed with a number of layers ranging from 1 to 20 layers.

### Claim 8 (depends on 1)

The device according to claim 1, further comprising a dielectric film formed on the adjustment film and on a side surface of the contact plug.

### Claim 9 (depends on 1)

The device according to claim 1, wherein the adjustment film is formed thinner than the contact plug.

### Claim 10 (depends on 1)

The device according to claim 1, wherein nickel (Ni) is used as a material of the contact plug and at least one of aluminum (Al) and palladium (Pd) is used as the material of the adjustment film.

### Claim 11

A method for fabricating a semiconductor device, comprising:
forming a catalytic metal film above a substrate;
forming a graphene film on the catalytic metal film;
forming a contact plug connected to the graphene film; and
forming an adjustment film that adjusts a Dirac point position in a same direction as a region connected to the contact plug with respect to a Fermi level in a region other than the region connected to the contact plug of a surface of the graphene film before the contact plug is formed.

### Claim 12 (depends on 11)

The method according to claim 11, wherein one of a metal, an organic compound, and an inorganic compound is used as a material of the adjustment film.

### Claim 13 (depends on 11)

The method according to claim 11, wherein at least one of silver (Ag), aluminum (Al), gold (Au), cobalt (Co), chrome (Cr), copper (Cu), iron (Fe), nickel (Ni), tantalum (Ta), titanium (Ti), tungsten (W), and vanadium (V) or an alloy containing at least one of the above metals is used as a material of the contact plug.

### Claim 14 (depends on 11)

The method according to claim 11, wherein at least one of cobalt (Co), nickel (Ni), iron (Fe), copper (Cu), ruthenium (Ru), and platinum (Pt) or an alloy containing at least one of the above metals is used as a material of the catalytic metal film.

### Claim 15 (depends on 11)

The method according to claim 11, wherein the graphene film is formed with a number of layers ranging from 1 to 20 layers.

### Claim 16 (depends on 11)

The method according to claim 11, wherein nickel (Ni) is used as a material of the contact plug, and
at least one of aluminum (Al) and palladium (Pd) is used as a material of the adjustment film.

### Claim 17

A method for fabricating a semiconductor device, comprising:
forming a catalytic metal film above a substrate;
forming a graphene film on the catalytic metal film;
forming, on the graphene film, an adjustment film that makes adjustments to move a Dirac point position on a surface of the graphene film when connected to the graphene film in a same direction as a moving direction of a Dirac point on the surface of the graphene film with respect to a Fermi level when a contact plug is connected to the graphene film;
forming a dielectric film on the adjustment film;
forming an opening until the surface of the graphene film is exposed from a surface of the dielectric film; and
forming the contact plug to connect to the graphene film in the opening.

### Claim 18 (depends on 17)

The method according to claim 17, wherein the graphene film is prevented from coming into contact with the dielectric film.

### Claim 19 (depends on 17)

The method according to claim 17, wherein a material that matches a doping type of a region of the graphene film where the contact plug is connected to the graphene film and a doping type of a other region of the graphene film is used as the adjustment film.

### Claim 20 (depends on 17)

The method according to claim 17, wherein nickel (Ni) is used as a material of the contact plug, and
at least one of aluminum (Al) and palladium (Pd) is used as a material of the adjustment film.