US 2012/0068159 A1 · NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a first memory portion. The first memory portion includes a first base semiconductor layer, a first electrode, a first channel semiconductor layer, a first base tunnel insulating film, a first channel tunnel insulating, a first charge retention layer and a first block insulating film. The first channel semiconductor layer is provided between the first base semiconductor layer and the first electrode, and includes a first channel portion. The first base tunnel insulating film is provided between the first base semiconductor layer and the first channel semiconductor layer. The first channel tunnel insulating film is provided between the first electrode and the first channel portion. The first charge retention layer is provided between the first electrode and the first channel tunnel insulating film. The first block insulating film is provided between the first electrode and the first charge retention layer.

Claims20

Dependent claims

A nonvolatile semiconductor memory device comprising:

a first memory portion,
the first memory portion including:
a first base semiconductor layer;
a first electrode;
a first channel semiconductor layer provided between the first base semiconductor layer and the first electrode, and including a first channel portion opposed to the first electrode;
a first base tunnel insulating film provided between the first base semiconductor layer and the first channel semiconductor layer;
a first channel tunnel insulating film provided between the first electrode and the first channel portion;
a first charge retention layer provided between the first electrode and the first channel tunnel insulating film to retain a charge;
and
a first block insulating film provided between the first electrode and the first charge retention layer.

7 more elements

A nonvolatile semiconductor memory device comprising:

a first stacked structure body including a plurality of first electrodes stacked in a first direction and a first inter-electrode insulating layer provided between the plurality of first electrodes;
a first base semiconductor layer opposed to a first side surface of the first electrodes, the first side surface being along the first direction;
a first channel semiconductor layer provided between the first side surface and the first base semiconductor layer;
a first base tunnel insulating film provided between the first base semiconductor layer and the first channel semiconductor layer;
a first channel tunnel insulating film provided between the first side surface and the first channel semiconductor layer;
a first charge retention layer provided between the first side surface and the first channel tunnel insulating film to retain a charge;
and
a first block insulating film provided between the first side surface and the first charge retention layer.

5 more elements

Dependencies are inferred from the claim text.

Nonvolatile semiconductor memory device

Life of this patent

Nonvolatile semiconductor memory device

Life of this patent

Abstract

Claims20