InN Nanowire Based Multifunctional Nanocantilever Sensors
AssigneeUniversity of South Carolina
InventorGoutam Koley
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Abstract
Sensor are generally provided that include a layer of silicon oxide on a portion of a n+ layer to form an uneven surface where the layer of silicon oxide defines a thicker region than an exposed portion of the n+ layer. First and second metal contacts can be on the layer of silicon oxide, with first and second nanowires extending respectively from a first base on the first metal contact and a second base on the second metal contact. The first nanowire and the second nanowire are connected together at an apex to form a v-shaped nanocantilever, wherein the apex is positioned over the exposed n+ layer, and wherein the nanowires comprise indium and nitrogen. Methods of fabricating such sensors, along with methods of their use, are also generally provided.
Claims18
A sensor, comprising:
- an n+ layer;
- a layer of silicon oxide on a portion of the n+ layer to form an uneven surface where the layer of silicon oxide defines a thicker region than an exposed portion of the n+ layer;
- a first metal contact on the layer of silicon oxide;
- a second metal contact on the layer of silicon oxide;
- a v-shaped nanowire extending over the exposed n+ layer, wherein the v-shaped nanowire defines a first arm extending from a first base contacting the first metal contact, wherein the first arm extents over the exposed n+ layer for a first length, and wherein the v-shaped nanowire defines a second arm extending from a second base contacting the second metal contact, wherein the second arm extents over the exposed n+ layer for a second length,
- the first arm and the second arm being connected together at an apex to form the v-shaped nanocantilever, wherein the apex is positioned over the exposed n+ layer, and wherein the v-shaped nanowire comprises indium and nitrogen.
The sensor as in claim 16, wherein the v-shaped nanowire comprises InN.
Dependencies are inferred from the claim text.