US 2012/0068152 A1 · GRAPHENE LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Claims45

Dependent claims

A graphene light-emitting device comprising:

a p-type graphene doped with a p-type dopant;
an n-type graphene doped with an n-type dopant;
and
an active graphene that is disposed between the p-type graphene and the n-type graphene and emits light,
wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/234,739Filed 16 Sep 2011

Priority

KR 10-2010-009125916 Sep 2010

Published

22 Mar 2012

Term ends

Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10H 20/812
Having quantum effect structures or superlattices, e.g. tunnel junctions: within the light-emitting regions, e.g. having quantum confinement…
H10D 30/481
Having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]: fETs having…
H10D 30/6741
Characterised by the active materials: group IV materials, e.g. germanium or silicon carbide
H10H 20/826
Materials of the light-emitting regions: comprising only Group IV materials

Graphene light-emitting device and method of manufacturing the same

Life of this patent

Graphene light-emitting device and method of manufacturing the same

Life of this patent

Abstract

Claims45