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US 2012/0068149 A1Published application
Apparatus of memory array using finfets
AssigneeInfineon Technologies AG
InventorsRonald Kakoschke, Klaus Schruefer
Life of this patent
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Abstract
In one or more embodiments, a semiconductor device a FinFET device and a second device. In one or more embodiments, the semiconductor device has a contact element coupled between a surface of the fin and the second device.
Claims19
A memory device, comprising:
- a FinFET select device having a fin;
- and
- a memory element, wherein the FinFET select device has a contact element coupled between a surface of the fin and the memory element.
A memory cell array of memory cells, at least one of the memory cells comprising:
- an NVM memory element;
- and
- a finFET electrically coupled to one of the memory element, wherein the area of said memory cell is less than 0.022 μm2.
A memory cell, comprising:
- an NVM memory element;
- a finFET electrically coupled to said memory element, wherein the cell size of said memory cell is less than 9A2, where A is one-half the fin pitch of said memory cell.
A memory cell, comprising:
- an NVM memory element;
- a finFET electrically coupled to said memory element, wherein the cell size of said memory cell is less than 22B2, where B is the printed gate length of said finFET.
Dependencies are inferred from the claim text.