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US 2012/0068146 A1Published application
Memory element and memory device
AssigneeSony Corporation
InventorsShinnosuke Hattori, Toshiyuki Kunikiyo, Mitsunori Nakamoto, Shuichiro Yasuda
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Abstract
There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and an ion source layer disposed between the resistance change layer and the second electrode.
Claims8
A memory element, comprising:
- a first electrode, a memory layer, and a second layer in this order, wherein
- the memory layer includes
- a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and
- an ion source layer disposed between the resistance change layer and the second electrode.
1 more element
A memory device, comprising:
- a plurality of memory elements each including a first electrode, a memory layer, and a second electrode in this order;
- and
- a pulse application section applying a voltage or current pulse selectively to the memory elements, wherein
- the memory layer includes
- a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and
- an ion source layer disposed between the resistance change layer and the second electrode.
3 more elements
Dependencies are inferred from the claim text.