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US 2012/0068145 A1Published application
Nonvolatile memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorKouji MATSUO
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Abstract
According to one embodiment, a nonvolatile memory device includes a first interconnect, an insulating layer, a needle-like metal oxide, and a second interconnect. The insulating layer is provided on the first interconnect. The needle-like metal oxide pierces the insulating layer in a vertical direction. The second interconnect is provided on the insulating layer.
Claims20
A nonvolatile memory device, comprising:
- a first interconnect;
- an insulating layer provided on the first interconnect;
- a needle-like metal oxide piercing the insulating layer in a vertical direction;
- and
- a second interconnect provided on the insulating layer.
2 more elements
A method for manufacturing a nonvolatile memory device, comprising:
- forming a first interconnect on a semiconductor substrate;
- forming a needle-like metal oxide on the first interconnect;
- forming an insulating layer to bury the needle-like metal oxide;
- and
- forming a second interconnect on the insulating layer.
2 more elements
Dependencies are inferred from the claim text.