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AssigneeNational Sun Yat-Sen University
InventorsTing-Chang CHANG, Po-Chun Yang, Yu-Shih Lin, Shih-Ching Chen, Fu-Yen Jian
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A resistance random access memory element includes a first electrode, an insulating layer, a diffusing metal layer, and a second electrode superimposed in sequence. The insulating layer includes a plurality of pointed electrodes. A method for making a resistance random access memory element includes growing and forming an insulating layer on a surface of a first electrode. A diffusing metal layer is formed on a surface of the insulating layer. A second electrode is mounted on a surface of the diffusing metal layer. A negative pole and a positive pole of a driving voltage are connected with the first and second electrodes, respectively. The diffusing metal in the diffusing metal layer is oxidized into metal ions by the driving voltage. The metal ions are driven into the insulating layer and form a plurality of pointed electrodes after reduction.
A resistance random access memory element comprising a first electrode, an insulating layer, a diffusing metal layer, and a second electrode superimposed in sequence, with the diffusing metal layer made of a diffusing metal, with the insulating layer including a plurality of pointed electrodes, with each of the plurality of pointed electrode made of the diffusing metal.
A method for making a resistance random access memory element comprising:
Dependencies are inferred from the claim text.