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US 2012/0068141 A1Published application
Silver-selenide/chalcogenide glass stack for resistance variable memory
AssigneeMicron Technology, Inc.
InventorsKristy A. Campbell, John T. Moore
Life of this patent
Estimating the term…
Abstract
The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100-x composition.
Claims28
1-107. (canceled)
A method of forming a resistance variable memory element, comprising:
- forming a first glass material;
- forming a silver-selenide material in contact with said first glass material, wherein said silver-selenide material comprises a plurality of silver-selenide layers in serial contact with each other;
- and
- forming a second glass material in contact with said silver-selenide material, whereby one of said first and second glass materials comprises a chalcogenide glass material.
1 more element
109-142. (canceled)
A resistance variable memory element comprising:
- a first glass material;
- a silver-selenide material in contact with said first glass material and comprising a plurality of silver-selenide layers in serial contact with each other;
- and
- a second glass material in contact with said silver-selenide material, wherein one of said first and second glass materials comprises a chalcogenide glass material.
1 more element
Dependencies are inferred from the claim text.