Magnetoresistive element and magnetic memory

A magnetoresistive element comprising:

• a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane;
• a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane;
• a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer;
• a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer;
• and
• a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer,
• the first interfacial magnetic layer including a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film, and a magnetization direction of one of the first ferromagnetic layer and the second ferromagnetic layer being changeable by a current flowing between the first ferromagnetic layer and the second ferromagnetic layer through the nonmagnetic layer, and a magnetization direction of the other of the first ferromagnetic layer and the second ferromagnetic layer being not changeable by the current.