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US 2012/0068137 A1Published application
Switching device and memory device including the same
AssigneeHynix Semiconductor Inc.
InventorsYun-Taek Hwang, Jae-Yun Yi
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Abstract
A switching device includes a first electrode, a bipolar tunneling layer, and a second electrode. The bipolar tunneling layer is formed on the first electrode and includes a plurality of dielectric layers having different dielectric constants. The second electrode is formed on the bipolar tunneling layer.
Claims23
A switching device comprising:
- a first electrode;
- a bipolar tunneling layer formed on the first electrode and comprising a plurality of dielectric layers having different dielectric constants;
- and
- a second electrode formed on the bipolar tunneling layer.
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A memory device comprising:
- a plurality of conductive lines intersecting each other;
- and
- a memory cell formed between the conductive lines at the intersections of the conductive lines and having a switching unit and a memory unit connected in series to each other,
- wherein the switching unit comprises a bipolar tunneling layer having a plurality of dielectric layers with different dielectric constants, respectively.
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Dependencies are inferred from the claim text.