Phase Change Memory Device, Storage System Having the Same and Fabricating Method Thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsHye-Young Park, Jeong-Hee Park, Hyun-Suk Kwon
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Abstract
Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and including a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other.
Claims27
A phase change memory device comprising:
- a substrate;
- an interlayer dielectric layer formed on the substrate;
- first and second contact holes formed in the interlayer dielectric layer;
- and
- a memory cell formed in the first and second contact holes and comprising a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer,
- wherein the first contact hole and the second contact hole are spaced apart from and separated from each other.
A phase change memory device comprising:
- a substrate;
- an interlayer dielectric layer formed on the substrate;
- first and second contact holes formed in the interlayer dielectric layer;
- and
- a memory cell formed in the first and second contact holes and comprising a diode, a first electrode on the diode, a phase change material layer on the first electrode, a second electrode on the phase change material layer, and a resistance adjusting unit that adjusts resistance between the first electrode and the phase change material layer and has sloping surfaces,
- wherein the first contact hole and the second contact hole are spaced apart from and separated from each other and the lateral surfaces of the phase change material layer and the sloping surfaces of the resistance adjusting unit have a same profile.
A storage system comprising:
- a phase change memory device;
- and
- a processor for controlling write and read operations of the phase change memory device,
- wherein the phase change memory device comprises a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and comprising a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other.
(canceled)
Dependencies are inferred from the claim text.