Sputtering Target, Transparent Conductive Film, and Their Manufacturing Method
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi Inoue, Shigeo Matsuzaki
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Abstract
A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 μm or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably.
Claims6
-15. (canceled)
A sputtering target, comprising a sintered product of a metal oxide comprising indium oxide, gallium oxide and zinc oxide, the metal oxide comprising one or more hexagonal crystal lamellar compounds selected from In2O3(ZnO)m (wherein m is an integer of 2 to 10), In2Ga2ZnO7, InGaZnO4, InGaZn2O5, InGaZn3O6, InGaZn4O7, InGaZn5O8, InGaZn6O9, and InGaZn7O10, and the sintered product having a composition of 90 to 99% by mass of the indium oxide and 1 to 10% by mass of the total of the gallium oxide and the zinc oxide.
-18. (canceled)
The sputtering target according to claim 18, wherein the maximum grain size of crystal of the hexagonal crystal lamellar compound is 5 μm or less.
A transparent conductive film, comprising a metal oxide comprising indium oxide, gallium oxide, and zinc oxide, the metal oxide having a composition of 90 to 99% by mass of the indium oxide, and 1 to 10% by mass of the total of the gallium oxide and the zinc oxide.
-25. (canceled)
Dependencies are inferred from the claim text.