Ion beam tuning
AssigneeVarian Semiconductor Equipment Associstes, Inc.
InventorsShengwu Chang, Joseph C. Olson, Frank Sinclair, Matthew P. McClellan
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Abstract
A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.
Claims15
A beam line ion implanter comprising:
- an ion source configured to generate an ion beam;
- a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin;
- and
- a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin.
A method of ion beam tuning comprising:
- generating an ion beam;
- focusing the ion beam to a focal point positioned at a scan origin;
- and
- scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.
Dependencies are inferred from the claim text.