Multi pixel photo detector array of geiger mode avalanche photodiodes

A multi-pixel photodetector array comprising:

• a semiconductor substrate having a back side, a front side, and a metallization layer on the front side;
• a plurality of Geiger mode avalanche photodiodes (GM-APDs) on said semiconductor substrate and configured to perform imaging applications with monochromatic radiation, each GM-APD comprising an anode contact;
• a common cathode contact for said plurality of GM-APDs and comprising a first connection lead on the backside of said semiconductor substrate;
• a second connection lead;
• and
• said metallization layer comprising a common anode collecting grid contact and configured to couple in common said anode contacts of said plurality of GM-APDs to said second connection lead;
• said plurality of GM-APDs configured to multiplex output information produced thereby and to generate, when a photon impinges thereon, current pulses of different shape for discrimination by an external circuit to be coupled to said common cathode contact and said anode collecting grid contact.

A multi-pixel photodetector array comprising:

• a semiconductor substrate having a back side and a front side;
• a plurality of Geiger mode avalanche photodiodes (GM-APDs) on said semiconductor substrate, each comprising an anode contact;
• a common cathode for said plurality of GM-APDs on the backside of said semiconductor substrate;
• and
• a common anode on the front side of said semiconductor substrate and configured to couple in common said anode contacts of said plurality of GM-APDs;
• each GM-APD configured to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit to be coupled to said common cathode and said common anode.

A method of making a multi-pixel photodetector array comprising:

• forming a semiconductor substrate having a back side and a front side;
• forming a plurality of Geiger mode avalanche photodiodes (GM-APDs) on the semiconductor substrate, each comprising an anode contact;
• forming a common cathode for the plurality of GM-APDs on the backside of the semiconductor substrate;
• and
• forming a common anode on the front side of the semiconductor substrate and configured to couple in common the anode contacts of the plurality of GM-APDs;
• each GM-APD to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit to be coupled to the common cathode and the common anode.