Laser processing method
AssigneeHamamatsu Photonics K.K.
InventorsTakeshi SAKAMOTO, Kenichi MURAMATSU
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AssigneeHamamatsu Photonics K.K.
InventorsTakeshi SAKAMOTO, Kenichi MURAMATSU
Estimating the term…
A laser processing method for preventing particles from occurring from cut sections of chips obtained by cutting a silicon wafer is provided. An irradiation condition of laser light L for forming modified regions 77 to 712 is made different from an irradiation condition of laser light L for forming the modified regions 713 to 719 such as to correct the spherical aberration of laser light L in areas where the depth from the front face 3 of a silicon wafer 11 is 335 μm to 525 μm. Therefore, even when the silicon wafer 11 and a functional device layer 16 are cut into semiconductor chips from modified regions 71 to 719 acting as a cutting start point, twist hackles do not appear remarkably in the areas where the depth is 335 μm to 525 μm, whereby particles are hard to occur.
1-10. (canceled)
A laser processing method of converging laser light within a silicon wafer having a thickness t (500 μm<t) with a condenser lens so as to form a plurality of rows of modified regions to become a cutting start point within the silicon wafer along a line to cut the silicon wafer, the method comprising the steps of:
A laser processing method of converging laser light within a silicon wafer having a thickness t (350 μm<t≦500 μm) with a condenser lens so as to form a plurality of rows of modified regions to become a cutting start point within the silicon wafer along a line to cut the silicon wafer, the method comprising the steps of:
Dependencies are inferred from the claim text.