Apparatus and method of processing substrate

Abstract

According to one embodiment, an apparatus of processing a substrate includes a treatment chamber, a holder, a feed device, and a temperature control device. The holder is provided in the treatment chamber and is configured to rotatably hold the substrate. The feed device includes a nozzle configured to eject an etching solution to a surface of the substrate held by the holder. The temperature control device includes first and second devices, and a controller. The first device is configured to heat and/or cool an atmosphere inside the treatment chamber. The second device is configured to heat and/or cool the etching solution. The controller is configured to control operation of the first and second devices such that a temperature of the atmosphere is higher than that of the etching solution in the nozzle and that difference between the temperature of the atmosphere and that of the etching solution is maintained constant.

Dependencies are inferred from the claim text.