Plasma processing apparatus and plasma processing method

A plasma processing method for performing a process on a target object with plasma by a plasma processing apparatus including:

• a processing chamber having an opening at an upper portion thereof and configured to perform therein the process on the target object by the plasma;
• a mounting table configured to mount the target object thereon within the processing chamber;
• a first electrode embedded in the mounting table and configured to apply a bias voltage to the target object;
• a dielectric plate configured to form a plasma generation space by closing the opening of the processing chamber and transmit a microwave so as to introduce the microwave into the processing chamber;
• a planar antenna provided above the dielectric plate and configured to introduce the microwave generated by a microwave generator into the processing chamber via the dielectric plate;
• an annular cover member provided on the processing chamber and including a contact support protruding toward the plasma generation space and configured to support an outer periphery of the dielectric plate on an upper surface of the contact support;
• an annular extended protrusion protruding from the processing chamber or the contact support toward the plasma generation space within the processing chamber with a gap between the dielectric plate and the annular extended protrusion and serving as a part of a second electrode facing the first electrode via the plasma generation space therebetween;
• and a space formed between an upper surface of the extended protrusion and a lower surface of the dielectric plate, the method comprising:
• generating the plasma in the processing chamber;
• and
• performing the process on the target object with the generated plasma by the plasma processing apparatus.